收藏本站

November 2013
FD B 2710
N-Channel PowerTrench ? MOSFET
250 V, 5 0 A, 42.5 m ?
Features
? R DS(on) = 36.3 m Ω ( Typ.)@ V GS = 10 V, I D = 25 A
? High Performance Trench T echnology for Extremely Low
R DS(on)
? Low Gate Charge
? High Power and Current Handing Capability
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s PowerTrench ? process that has been tailored
to minimize the on-state resistance while maintaining superior
switching performance.
Applications
? Synchronous Rectification
? Battery Protection Circuit
? Motor D rives and Uninterruptible Power Supplies
D
D
G
S
D 2 -PAK
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain-Source Voltage
Gate-Source voltage
Parameter
FDB2710
250
± 30
Unit
V
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
50
31.3
A
A
I DM
Drain Current
- Pulsed
(Note 1)
See Figure 9
A
E AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
145
4.5
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate above 25 ° C
260
2.1
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max.
Symbol
R θ JC
R θ JA
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
2
FDB2 710
0.48
62.5
40
Unit
° C/W
° C/W
° C/W
?200 6 Fairchild Semiconductor Corporation
FDB2710 Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB28N30TM MOSFET N-CH 300V 28A D2PAK
FDB3502 MOSFET N-CH 75V 6A TO-263AB
FDB3652_F085 MOSFET N-CH 100V 61A D2PAK
FDB3672_F085 MOSFET N-CH 100V 44A D2PAK
FDB3860 MOSFET N-CH 100V 6.4A D2PAK
FDB390N15A MOSFET N-CH 150V 27A D2PAK
FDB44N25TM MOSFET N-CH 250V 44A D2PAK
FDB52N20TM MOSFET N-CH 200V 52A D2PAK
相关代理商/技术参数
FDB28N30 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel MOSFET
FDB28N30TM 功能描述:MOSFET 300V N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB-3 功能描述:化学物质 CAP 10/PACK RoHS:否 制造商:3M Electronic Specialty 产品:Adhesives 类型:Epoxy Compound 大小:1.7 oz 外壳:Plastic Tube
FDB300 制造商:DEC 制造商全称:DEC 功能描述:3 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDB301 制造商:DEC 制造商全称:DEC 功能描述:3 AMP FAST RECOVERY BRIDGE RECTIFIERS
FDB3015 制造商:Eaton Corporation 功能描述:TYPE FDB, 3 POLE, 15A TRIP, 600V CLASS, LOAD TERMINALS ONLY
FDB3015L 制造商:Eaton Corporation 功能描述:TYPE FDB, 3 POLE, 15A TRIP, 600V CLASS, LINE AND LOAD
FDB302 制造商:DEC 制造商全称:DEC 功能描述:3 AMP FAST RECOVERY BRIDGE RECTIFIERS